| PART |
Description |
Maker |
| 1SV229 |
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
Variable Capacitance Diode VCO for UHF Band Radio
|
Toshiba Semiconductor
|
| MV1402-5MCHIP MV1401B-4M MV1405B-2M MV1403-6MCHIP |
360 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
550 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-14
250 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
175 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
100 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
120 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
|
|
| HVU359 |
Diodes>Variable Capacitance
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
| HVD362 |
Diodes>Variable Capacitance
Variable Capacitance Diode for VCO
|
RENESAS[Renesas Electronics Corporation]
|
| HVL355C |
6.82 pF, SILICON, VARIABLE CAPACITANCE DIODE
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
| HVL385C |
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
| HVL381C |
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
| HVD350B |
Variable Capacitance Diode for VCO
|
Zhaoxingwei Electronics ., Ltd
Zhaoxingwei Electronics...
|
| HVC362 |
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
| HVC369B HVC369 |
Variable Capacitance Diode for VCO
|
HITACHI[Hitachi Semiconductor]
|
| RKV608KP |
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
